ZENER BREAKDOWN

When the P and N regions are heavily dopped, direct rupture of the covalent bonds takes place because of the electric field. At the junction of the PN junction diode the new electron -hole pairs will be created increase the reverse current takes place at a constant reverse bias voltage typically 6v for heavily dopped diodes . As a result of hevy dopping the diplition region is reduced then the field across the diplition is very large 10^7 this is called as the zener breakdown

AVALANCHE BREAKDOWN

AVALANCHE BREAKDOWN :-

As the applied rever4se bias increases , the field across the junction increases correspondingly.

Thermally generated carriers while traversing the junction acquire large amount of kinetic energy from this field. As a result the velocity of these carriers will increase.these electrons disrupt covalent bonds by colliding the immobile ions and create new electron -hole pairs. these new carriers again acquire sufficient energy from the field and collide with the other immobile ions there by generating further electron-hole pairs.

This process commulatiove in nature and results generation of avalanche of the charge carriers within ashort time.

This mechanism of carier generation is known as the Avalanche Multiplication. This prcess resuts flow of large amount of current at the same value of the reverse bias

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